2t312b = Bcy42, 2sc105 Transistor 35v Ussr Lot Of 10 Pcs
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2t312b = Bcy42, 2sc105 Transistor 35v Ussr Lot Of 10 Pcs:
2T312B = BCY42, 2SC105 Transistor 35V
Lot of 10 pcs
New, never used /NOS / New Old Stock/
Transistors 2T312B silicon epitaxial planar structure of the npn universal.
Designed for use in switching devices, amplifiers and oscillators.
Available in metal packages with flexible wires.
Type of device is indicated on the package.
Mass transistor is not more than 1 g
The main technical characteristics of the transistor 2T312B:
• The structure of the transistor: npn
• Pk max - Constant power dissipation Collector: 225 mW;
• fgr - Cut-off frequency of the transistor current gain for the common-emitter: at least 120 MHz;
• Ukbo max - Maximum voltage collector-base for a given reverse current collector and emitter open circuit: 35 V;
• Uebo max - Maximum voltage emitter-base junction reverse current at a given emitter and collector open circuit: 4;
• Ik max - Maximum DC Collector Current: 30 mA;
• Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and open emitter output: less than 10 mA;
h21E - Static current transfer ratio for the common-emitter large-signal: 25 ... 100;
• CK - collector junction capacity: no more than 5 pF;
• Rke us - saturation resistance between the collector and emitter: less than 40 ohms;
• tc - time constant of the response loop at high frequency: less than 500 ps
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